FP75R07N2E4B16BOSA1 by Infineon Technologies – Specifications

Infineon Technologies FP75R07N2E4B16BOSA1 is a FP75R07N2E4B16BOSA1 from Infineon Technologies, part of the IGBTs. It is designed for 20mW 95A 650V FS(Field Stop) - IGBTs ROHS. This product comes in a - package and is sold as Tray. Key features include:

  • Power Dissipation (Pd): 20mW
  • Collector Current (Ic): 95A
  • Collector-Emitter Breakdown Voltage (Vces): 650V
  • Input Capacitance (Cies@Vce): 4.6nF@25V
  • Type: FS(Field Stop)
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 1.95V@15V,75A

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on FP75R07N2E4B16BOSA1

Full Specifications of FP75R07N2E4B16BOSA1

Model NumberFP75R07N2E4B16BOSA1
Model NameInfineon Technologies FP75R07N2E4B16BOSA1
CategoryIGBTs
BrandInfineon Technologies
Description20mW 95A 650V FS(Field Stop) - IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / Case-
Package / ArrangeTray
BatteryNo
ECCNEAR99
Power Dissipation (Pd)20mW
Operating Temperature-
Collector Current (Ic)95A
Collector-Emitter Breakdown Voltage (Vces)650V
Input Capacitance (Cies@Vce)4.6nF@25V
TypeFS(Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)1.95V@15V,75A

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