FP75R12KE3BOSA1 by Infineon Technologies – Specifications

Infineon Technologies FP75R12KE3BOSA1 is a FP75R12KE3BOSA1 from Infineon Technologies, part of the IGBTs. It is designed for 355W 105A 1.2kV NPT(非穿通型) - IGBTs ROHS. This product comes in a - package and is sold as Bag-packed. Key features include:

  • Power Dissipation (Pd): 355W
  • Operating Temperature: -40℃~+125℃@(Tj)
  • Collector Current (Ic): 105A
  • Collector-Emitter Breakdown Voltage (Vces): 1.2kV
  • Input Capacitance (Cies@Vce): 5.3nF@25V
  • Type: NPT(非穿通型)
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.2V@15V,75A

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on FP75R12KE3BOSA1

Full Specifications of FP75R12KE3BOSA1

Model NumberFP75R12KE3BOSA1
Model NameInfineon Technologies FP75R12KE3BOSA1
CategoryIGBTs
BrandInfineon Technologies
Description355W 105A 1.2kV NPT(非穿通型) - IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / Case-
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Power Dissipation (Pd)355W
Operating Temperature-40℃~+125℃@(Tj)
Collector Current (Ic)105A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Input Capacitance (Cies@Vce)5.3nF@25V
TypeNPT(非穿通型)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.2V@15V,75A

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