FS100R07N2E4B11BPSA1 by Infineon Technologies – Specifications

Infineon Technologies FS100R07N2E4B11BPSA1 is a FS100R07N2E4B11BPSA1 from Infineon Technologies, part of the IGBTs. It is designed for 335W 100A 650V FS(Field Stop) - IGBTs ROHS. This product comes in a - package and is sold as Tray. Key features include:

  • Power Dissipation (Pd): 335W
  • Operating Temperature: -40℃~+150℃@(Tj)
  • Collector Current (Ic): 100A
  • Collector-Emitter Breakdown Voltage (Vces): 650V
  • Input Capacitance (Cies@Vce): 6.2nF@25V
  • Type: FS(Field Stop)
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 1.95V@15V,100A

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on FS100R07N2E4B11BPSA1

Full Specifications of FS100R07N2E4B11BPSA1

Model NumberFS100R07N2E4B11BPSA1
Model NameInfineon Technologies FS100R07N2E4B11BPSA1
CategoryIGBTs
BrandInfineon Technologies
Description335W 100A 650V FS(Field Stop) - IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / Case-
Package / ArrangeTray
BatteryNo
ECCNEAR99
Power Dissipation (Pd)335W
Operating Temperature-40℃~+150℃@(Tj)
Collector Current (Ic)100A
Collector-Emitter Breakdown Voltage (Vces)650V
Input Capacitance (Cies@Vce)6.2nF@25V
TypeFS(Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)1.95V@15V,100A

Compare Infineon Technologies - FS100R07N2E4B11BPSA1 With Other 200 Models

Related Models - FS100R07N2E4B11BPSA1 Alternative

Scroll to Top