FS75R07W2E3B11ABOMA1 by Infineon Technologies – Specifications

Infineon Technologies FS75R07W2E3B11ABOMA1 is a FS75R07W2E3B11ABOMA1 from Infineon Technologies, part of the IGBTs. It is designed for 275W 95A 650V FS(Field Stop) - IGBTs ROHS. This product comes in a - package and is sold as Tray. Key features include:

• Power Dissipation (Pd): 275W
• Operating Temperature: -40℃~+150℃@(Tj)
• Collector Current (Ic): 95A
• Collector-Emitter Breakdown Voltage (Vces): 650V
• Input Capacitance (Cies@Vce): 4.6nF@25V
• Type: FS(Field Stop)
• Gate-Emitter Threshold Voltage (Vge(th)@Ic): 1.9V@15V,75A

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.