Infineon Technologies IAUC100N08S5N043 is a IAUC100N08S5N043 from Infineon Technologies, part of the MOSFETs. It is designed for 80V 100A 4mΩ@10V,50A 125W 3.8V@63uA 1PCSNChannel TDSON-8(6.2x5.2) MOSFETs ROHS. This product comes in a TDSON-8(6.2x5.2) package and is sold as Tape & Reel (TR). Key features include:
- Drain Source Voltage (Vdss): 80V
- Continuous Drain Current (Id): 100A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 4mΩ@10V,50A
- Power Dissipation (Pd): 125W
- Gate Threshold Voltage (Vgs(th)@Id): 3.8V@63uA
- Type: 1PCSNChannel
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on IAUC100N08S5N043
Full Specifications of IAUC100N08S5N043
Model Number | IAUC100N08S5N043 |
Model Name | Infineon Technologies IAUC100N08S5N043 |
Category | MOSFETs |
Brand | Infineon Technologies |
Description | 80V 100A 4mΩ@10V,50A 125W 3.8V@63uA 1PCSNChannel TDSON-8(6.2x5.2) MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | TDSON-8(6.2x5.2) |
Package / Arrange | Tape & Reel (TR) |
Battery | No |
ECCN | - |
Drain Source Voltage (Vdss) | 80V |
Continuous Drain Current (Id) | 100A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 4mΩ@10V,50A |
Power Dissipation (Pd) | 125W |
Gate Threshold Voltage (Vgs(th)@Id) | 3.8V@63uA |
Type | 1PCSNChannel |
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