IAUC120N04S6L005ATMA1 by Infineon Technologies – Specifications

Infineon Technologies IAUC120N04S6L005ATMA1 is a IAUC120N04S6L005ATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 40V 120A 0.55mΩ@60A,10V 187W 2V@130uA 1PCSNChannel TDSON-8 MOSFETs ROHS. This product comes in a TDSON-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 120A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 0.55mΩ@60A,10V
  • Power Dissipation (Pd): 187W
  • Gate Threshold Voltage (Vgs(th)@Id): 2V@130uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 11.203nF@25V
  • Total Gate Charge (Qg@Vgs): 177nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.61 grams.

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Full Specifications of IAUC120N04S6L005ATMA1

Model NumberIAUC120N04S6L005ATMA1
Model NameInfineon Technologies IAUC120N04S6L005ATMA1
CategoryMOSFETs
BrandInfineon Technologies
Description40V 120A 0.55mΩ@60A,10V 187W 2V@130uA 1PCSNChannel TDSON-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.610 grams / 0.021517 oz
Package / CaseTDSON-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)40V
Continuous Drain Current (Id)120A
Drain Source On Resistance (RDS(on)@Vgs,Id)0.55mΩ@60A,10V
Power Dissipation (Pd)187W
Gate Threshold Voltage (Vgs(th)@Id)2V@130uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)11.203nF@25V
Total Gate Charge (Qg@Vgs)177nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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