IAUC64N08S5L075ATMA1 by Infineon Technologies – Specifications

Infineon Technologies IAUC64N08S5L075ATMA1 is a IAUC64N08S5L075ATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 80V 64A 75W 7.5mΩ@32A,10V 2V@30uA 1PCSNChannel TDSON-8-33 MOSFETs ROHS. This product comes in a TDSON-8-33 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 80V
  • Continuous Drain Current (Id): 64A
  • Power Dissipation (Pd): 75W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 7.5mΩ@32A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 2V@30uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.106nF@40V
  • Total Gate Charge (Qg@Vgs): 37nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of IAUC64N08S5L075ATMA1

Model NumberIAUC64N08S5L075ATMA1
Model NameInfineon Technologies IAUC64N08S5L075ATMA1
CategoryMOSFETs
BrandInfineon Technologies
Description80V 64A 75W 7.5mΩ@32A,10V 2V@30uA 1PCSNChannel TDSON-8-33 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTDSON-8-33
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)80V
Continuous Drain Current (Id)64A
Power Dissipation (Pd)75W
Drain Source On Resistance (RDS(on)@Vgs,Id)7.5mΩ@32A,10V
Gate Threshold Voltage (Vgs(th)@Id)2V@30uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.106nF@40V
Total Gate Charge (Qg@Vgs)37nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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