IAUT300N10S5N014ATMA1 by Infineon Technologies – Specifications

Infineon Technologies IAUT300N10S5N014ATMA1 is a IAUT300N10S5N014ATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 100V 360A 375W 1.4mΩ@10V,100A 3.8V@275uA 1PCSNChannel HSOF-8 MOSFETs ROHS. This product comes in a HSOF-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 360A
  • Power Dissipation (Pd): 375W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.4mΩ@10V,100A
  • Gate Threshold Voltage (Vgs(th)@Id): 3.8V@275uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 16.011nF@50V
  • Total Gate Charge (Qg@Vgs): 216nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IAUT300N10S5N014ATMA1

Full Specifications of IAUT300N10S5N014ATMA1

Model NumberIAUT300N10S5N014ATMA1
Model NameInfineon Technologies IAUT300N10S5N014ATMA1
CategoryMOSFETs
BrandInfineon Technologies
Description100V 360A 375W 1.4mΩ@10V,100A 3.8V@275uA 1PCSNChannel HSOF-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseHSOF-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)360A
Power Dissipation (Pd)375W
Drain Source On Resistance (RDS(on)@Vgs,Id)1.4mΩ@10V,100A
Gate Threshold Voltage (Vgs(th)@Id)3.8V@275uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)16.011nF@50V
Total Gate Charge (Qg@Vgs)216nC@10V
Operating Temperature-55℃~+175℃@(Tj)

Compare Infineon Technologies - IAUT300N10S5N014ATMA1 With Other 200 Models

Related Models - IAUT300N10S5N014ATMA1 Alternative

Scroll to Top