IAUZ40N10S5N130ATMA1 by Infineon Technologies – Specifications

Infineon Technologies IAUZ40N10S5N130ATMA1 is a IAUZ40N10S5N130ATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 100V 40A 13mΩ@20A,10V 68W 3.8V@27uA 1PCSNChannel TSDSON-8 MOSFETs ROHS. This product comes in a TSDSON-8 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 40A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 13mΩ@20A,10V
  • Power Dissipation (Pd): 68W
  • Gate Threshold Voltage (Vgs(th)@Id): 3.8V@27uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.525nF@50V
  • Total Gate Charge (Qg@Vgs): 24nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IAUZ40N10S5N130ATMA1

Model NumberIAUZ40N10S5N130ATMA1
Model NameInfineon Technologies IAUZ40N10S5N130ATMA1
CategoryMOSFETs
BrandInfineon Technologies
Description100V 40A 13mΩ@20A,10V 68W 3.8V@27uA 1PCSNChannel TSDSON-8 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTSDSON-8
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)40A
Drain Source On Resistance (RDS(on)@Vgs,Id)13mΩ@20A,10V
Power Dissipation (Pd)68W
Gate Threshold Voltage (Vgs(th)@Id)3.8V@27uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.525nF@50V
Total Gate Charge (Qg@Vgs)24nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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