IGB50N60TATMA1 by Infineon Technologies – Specifications

Infineon Technologies IGB50N60TATMA1 is a IGB50N60TATMA1 from Infineon Technologies, part of the IGBTs. It is designed for 333W 100A 600V TO-263 IGBTs ROHS. This product comes in a TO-263 package and is sold as Tape & Reel (TR). Key features include:

  • Turn?off Delay Time (Td(off)): 299ns
  • Power Dissipation (Pd): 333W
  • Turn?on Delay Time (Td(on)): 26ns
  • Operating Temperature: -40℃~+175℃@(Tj)
  • Collector Current (Ic): 100A
  • Collector-Emitter Breakdown Voltage (Vces): 600V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2V@15V,50A
  • Total Gate Charge (Qg@Ic,Vge): 310nC
  • Turn?off Switching Loss (Eoff): 2.6mJ
  • Turn?on Switching Loss (Eon): 2.6mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IGB50N60TATMA1

Full Specifications of IGB50N60TATMA1

Model NumberIGB50N60TATMA1
Model NameInfineon Technologies IGB50N60TATMA1
CategoryIGBTs
BrandInfineon Technologies
Description333W 100A 600V TO-263 IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-263
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))299ns
Power Dissipation (Pd)333W
Turn?on Delay Time (Td(on))26ns
Operating Temperature-40℃~+175℃@(Tj)
Collector Current (Ic)100A
Collector-Emitter Breakdown Voltage (Vces)600V
Input Capacitance (Cies@Vce)-
Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2V@15V,50A
Total Gate Charge (Qg@Ic,Vge)310nC
Turn?off Switching Loss (Eoff)2.6mJ
Turn?on Switching Loss (Eon)2.6mJ

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