IGP30N60H3 by Infineon Technologies – Specifications

Infineon Technologies IGP30N60H3 is a IGP30N60H3 from Infineon Technologies, part of the IGBTs. It is designed for 187W 60A 600V FS(Field Stop) TO-220 IGBTs ROHS. This product comes in a TO-220 package and is sold as Tube-packed. Key features include:

  • Turn?off Delay Time (Td(off)): 207ns
  • Power Dissipation (Pd): 187W
  • Operating Temperature: -40℃~+175℃
  • Turn?on Delay Time (Td(on)): 18ns
  • Collector Current (Ic): 60A
  • Collector-Emitter Breakdown Voltage (Vces): 600V
  • Type: FS(Field Stop)
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 5.1V@430uA
  • Total Gate Charge (Qg@Ic,Vge): 165nC@30A,15V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge): 1.95V@30A,15V
  • Turn?off Switching Loss (Eoff): 0.44mJ
  • Turn?on Switching Loss (Eon): 0.73mJ
  • Input Capacitance (Cies@Vce): 1.63nF@25V

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.86 grams.

Full Specifications of IGP30N60H3

Model NumberIGP30N60H3
Model NameInfineon Technologies IGP30N60H3
CategoryIGBTs
BrandInfineon Technologies
Description187W 60A 600V FS(Field Stop) TO-220 IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.860 grams / 0.100884 oz
Package / CaseTO-220
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))207ns
Power Dissipation (Pd)187W
Operating Temperature-40℃~+175℃
Turn?on Delay Time (Td(on))18ns
Collector Current (Ic)60A
Collector-Emitter Breakdown Voltage (Vces)600V
TypeFS(Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5.1V@430uA
Total Gate Charge (Qg@Ic,Vge)165nC@30A,15V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge)1.95V@30A,15V
Diode Reverse Recovery Time (Trr)-
Turn?off Switching Loss (Eoff)0.44mJ
Turn?on Switching Loss (Eon)0.73mJ
Input Capacitance (Cies@Vce)1.63nF@25V
Diode Forward Voltage (Vf@If)-

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