IGP50N60T by Infineon Technologies – Specifications

Infineon Technologies IGP50N60T is a IGP50N60T from Infineon Technologies, part of the IGBTs. It is designed for 333W 90A 600V FS(Field Stop) TO-220-3 IGBTs ROHS. This product comes in a TO-220-3 package and is sold as Tube-packed. Key features include:

  • Turn?off Delay Time (Td(off)): 299ns
  • Power Dissipation (Pd): 333W
  • Operating Temperature: -40℃~+175℃@(Tj)
  • Turn?on Delay Time (Td(on)): 26ns
  • Collector Current (Ic): 90A
  • Collector-Emitter Breakdown Voltage (Vces): 600V
  • Type: FS(Field Stop)
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2V@15V,50A
  • Total Gate Charge (Qg@Ic,Vge): 310nC
  • Turn?off Switching Loss (Eoff): 1.4mJ
  • Turn?on Switching Loss (Eon): 1.2mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 3.55 grams.

More on IGP50N60T

Full Specifications of IGP50N60T

Model NumberIGP50N60T
Model NameInfineon Technologies IGP50N60T
CategoryIGBTs
BrandInfineon Technologies
Description333W 90A 600V FS(Field Stop) TO-220-3 IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:3.550 grams / 0.125223 oz
Package / CaseTO-220-3
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))299ns
Power Dissipation (Pd)333W
Operating Temperature-40℃~+175℃@(Tj)
Turn?on Delay Time (Td(on))26ns
Collector Current (Ic)90A
Collector-Emitter Breakdown Voltage (Vces)600V
TypeFS(Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2V@15V,50A
Total Gate Charge (Qg@Ic,Vge)310nC
Turn?off Switching Loss (Eoff)1.4mJ
Turn?on Switching Loss (Eon)1.2mJ

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