IGW40N65F5FKSA1 by Infineon Technologies – Specifications

Infineon Technologies IGW40N65F5FKSA1 is a IGW40N65F5FKSA1 from Infineon Technologies, part of the IGBTs. It is designed for 255W 74A 650V TO-247-3 IGBTs ROHS. This product comes in a TO-247-3 package and is sold as Tube-packed. Key features include:

  • Turn?off Delay Time (Td(off)): 160ns
  • Power Dissipation (Pd): 255W
  • Turn?on Delay Time (Td(on)): 19ns
  • Operating Temperature: -40℃~+175℃@(Tj)
  • Collector Current (Ic): 74A
  • Collector-Emitter Breakdown Voltage (Vces): 650V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.1V@15V,40A
  • Total Gate Charge (Qg@Ic,Vge): 95nC
  • Turn?off Switching Loss (Eoff): 0.1mJ
  • Turn?on Switching Loss (Eon): 0.36mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 8.55 grams.

More on IGW40N65F5FKSA1

Full Specifications of IGW40N65F5FKSA1

Model NumberIGW40N65F5FKSA1
Model NameInfineon Technologies IGW40N65F5FKSA1
CategoryIGBTs
BrandInfineon Technologies
Description255W 74A 650V TO-247-3 IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:8.550 grams / 0.301593 oz
Package / CaseTO-247-3
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))160ns
Power Dissipation (Pd)255W
Turn?on Delay Time (Td(on))19ns
Operating Temperature-40℃~+175℃@(Tj)
Collector Current (Ic)74A
Collector-Emitter Breakdown Voltage (Vces)650V
Input Capacitance (Cies@Vce)-
Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.1V@15V,40A
Total Gate Charge (Qg@Ic,Vge)95nC
Turn?off Switching Loss (Eoff)0.1mJ
Turn?on Switching Loss (Eon)0.36mJ

Compare Infineon Technologies - IGW40N65F5FKSA1 With Other 200 Models

Related Models - IGW40N65F5FKSA1 Alternative

Scroll to Top