IGW60N60H3 by Infineon Technologies – Specifications

Infineon Technologies IGW60N60H3 is a IGW60N60H3 from Infineon Technologies, part of the IGBTs. It is designed for 416W 80A 600V FS(Field Stop) TO-247-3 IGBTs ROHS. This product comes in a TO-247-3 package and is sold as Tube-packed. Key features include:

  • Power Dissipation (Pd): 416W
  • Turn?off Delay Time (Td(off)): 252ns
  • Operating Temperature: -40℃~+175℃@(Tj)
  • Turn?on Delay Time (Td(on)): 27ns
  • Collector Current (Ic): 80A
  • Collector-Emitter Breakdown Voltage (Vces): 600V
  • Type: FS(Field Stop)
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 5.1V@1mA
  • Total Gate Charge (Qg@Ic,Vge): 375nC@60A,15V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge): 1.85V@60A,15V
  • Turn?off Switching Loss (Eoff): 1.13mJ
  • Turn?on Switching Loss (Eon): 2.1mJ
  • Input Capacitance (Cies@Vce): 3.66nF@25V

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 8.55 grams.

More on IGW60N60H3

Full Specifications of IGW60N60H3

Model NumberIGW60N60H3
Model NameInfineon Technologies IGW60N60H3
CategoryIGBTs
BrandInfineon Technologies
Description416W 80A 600V FS(Field Stop) TO-247-3 IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:8.550 grams / 0.301593 oz
Package / CaseTO-247-3
Package / ArrangeTube-packed
BatteryNo
ECCN-
Power Dissipation (Pd)416W
Turn?off Delay Time (Td(off))252ns
Operating Temperature-40℃~+175℃@(Tj)
Turn?on Delay Time (Td(on))27ns
Collector Current (Ic)80A
Collector-Emitter Breakdown Voltage (Vces)600V
TypeFS(Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5.1V@1mA
Total Gate Charge (Qg@Ic,Vge)375nC@60A,15V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge)1.85V@60A,15V
Diode Reverse Recovery Time (Trr)-
Turn?off Switching Loss (Eoff)1.13mJ
Turn?on Switching Loss (Eon)2.1mJ
Input Capacitance (Cies@Vce)3.66nF@25V
Diode Forward Voltage (Vf@If)-

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