IKB15N65EH5 by Infineon Technologies – Specifications

Infineon Technologies IKB15N65EH5 is a IKB15N65EH5 from Infineon Technologies, part of the IGBTs. It is designed for 105W 30A 650V TO-263-3 IGBTs ROHS. This product comes in a TO-263-3 package and is sold as Tape & Reel (TR). Key features include:

  • Turn?off Delay Time (Td(off)): 145ns
  • Power Dissipation (Pd): 105W
  • Operating Temperature: -40℃~+175℃@(Tj)
  • Turn?on Delay Time (Td(on)): 16ns
  • Collector Current (Ic): 30A
  • Collector-Emitter Breakdown Voltage (Vces): 650V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 4V@150uA
  • Total Gate Charge (Qg@Ic,Vge): 38nC@15A,15V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge): 1.65V@15A,15V
  • Diode Reverse Recovery Time (Trr): 70ns
  • Turn?off Switching Loss (Eoff): 0.08mJ
  • Turn?on Switching Loss (Eon): 0.4mJ
  • Input Capacitance (Cies@Vce): 930pF@25V
  • Diode Forward Voltage (Vf@If): 1.45V@15A

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of IKB15N65EH5

Model NumberIKB15N65EH5
Model NameInfineon Technologies IKB15N65EH5
CategoryIGBTs
BrandInfineon Technologies
Description105W 30A 650V TO-263-3 IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-263-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Turn?off Delay Time (Td(off))145ns
Power Dissipation (Pd)105W
Operating Temperature-40℃~+175℃@(Tj)
Turn?on Delay Time (Td(on))16ns
Collector Current (Ic)30A
Collector-Emitter Breakdown Voltage (Vces)650V
Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4V@150uA
Total Gate Charge (Qg@Ic,Vge)38nC@15A,15V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge)1.65V@15A,15V
Diode Reverse Recovery Time (Trr)70ns
Turn?off Switching Loss (Eoff)0.08mJ
Turn?on Switching Loss (Eon)0.4mJ
Input Capacitance (Cies@Vce)930pF@25V
Diode Forward Voltage (Vf@If)1.45V@15A

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