IKD04N60RATMA1 by Infineon Technologies – Specifications

Infineon Technologies IKD04N60RATMA1 is a IKD04N60RATMA1 from Infineon Technologies, part of the IGBTs. It is designed for 75W 8A 600V FS(Field Stop) TO-252-3 IGBTs ROHS. This product comes in a TO-252-3 package and is sold as Tape & Reel (TR). Key features include:

  • Turn?off Delay Time (Td(off)): 146ns
  • Power Dissipation (Pd): 75W
  • Turn?on Delay Time (Td(on)): 14ns
  • Operating Temperature: -40℃~+175℃@(Tj)
  • Collector Current (Ic): 8A
  • Collector-Emitter Breakdown Voltage (Vces): 600V
  • Type: FS(Field Stop)
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.1V@15V,4A
  • Total Gate Charge (Qg@Ic,Vge): 27nC
  • Diode Reverse Recovery Time (Trr): 43ns
  • Turn?off Switching Loss (Eoff): 0.15mJ
  • Turn?on Switching Loss (Eon): 0.09mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IKD04N60RATMA1

Full Specifications of IKD04N60RATMA1

Model NumberIKD04N60RATMA1
Model NameInfineon Technologies IKD04N60RATMA1
CategoryIGBTs
BrandInfineon Technologies
Description75W 8A 600V FS(Field Stop) TO-252-3 IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-252-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))146ns
Power Dissipation (Pd)75W
Turn?on Delay Time (Td(on))14ns
Operating Temperature-40℃~+175℃@(Tj)
Collector Current (Ic)8A
Collector-Emitter Breakdown Voltage (Vces)600V
Input Capacitance (Cies@Vce)-
TypeFS(Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.1V@15V,4A
Total Gate Charge (Qg@Ic,Vge)27nC
Diode Reverse Recovery Time (Trr)43ns
Turn?off Switching Loss (Eoff)0.15mJ
Turn?on Switching Loss (Eon)0.09mJ

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