IKD06N60RFATMA1 by Infineon Technologies – Specifications

Infineon Technologies IKD06N60RFATMA1 is a IKD06N60RFATMA1 from Infineon Technologies, part of the IGBTs. It is designed for 100W 12A 600V FS(Field Stop) TO-252-3 IGBTs ROHS. This product comes in a TO-252-3 package and is sold as Tape & Reel (TR). Key features include:

  • Turn?off Delay Time (Td(off)): 106ns
  • Power Dissipation (Pd): 100W
  • Turn?on Delay Time (Td(on)): 7ns
  • Operating Temperature: -40℃~+175℃@(Tj)
  • Collector Current (Ic): 12A
  • Collector-Emitter Breakdown Voltage (Vces): 600V
  • Type: FS(Field Stop)
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.5V@15V,6A
  • Total Gate Charge (Qg@Ic,Vge): 48nC
  • Diode Reverse Recovery Time (Trr): 48ns
  • Turn?off Switching Loss (Eoff): 0.09mJ
  • Turn?on Switching Loss (Eon): 0.09mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.54 grams.

More on IKD06N60RFATMA1

Full Specifications of IKD06N60RFATMA1

Model NumberIKD06N60RFATMA1
Model NameInfineon Technologies IKD06N60RFATMA1
CategoryIGBTs
BrandInfineon Technologies
Description100W 12A 600V FS(Field Stop) TO-252-3 IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.540 grams / 0.019048 oz
Package / CaseTO-252-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))106ns
Power Dissipation (Pd)100W
Turn?on Delay Time (Td(on))7ns
Operating Temperature-40℃~+175℃@(Tj)
Collector Current (Ic)12A
Collector-Emitter Breakdown Voltage (Vces)600V
Input Capacitance (Cies@Vce)-
TypeFS(Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.5V@15V,6A
Total Gate Charge (Qg@Ic,Vge)48nC
Diode Reverse Recovery Time (Trr)48ns
Turn?off Switching Loss (Eoff)0.09mJ
Turn?on Switching Loss (Eon)0.09mJ

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