IKD06N65ET6ARMA1 by Infineon Technologies – Specifications

Infineon Technologies IKD06N65ET6ARMA1 is a IKD06N65ET6ARMA1 from Infineon Technologies, part of the IGBTs. It is designed for 31W 9A 650V FS(Field Stop) TO-252-3 IGBTs ROHS. This product comes in a TO-252-3 package and is sold as Tape & Reel (TR). Key features include:

  • Turn?off Delay Time (Td(off)): 35ns
  • Power Dissipation (Pd): 31W
  • Turn?on Delay Time (Td(on)): 15ns
  • Operating Temperature: -40℃~+175℃@(Tj)
  • Collector Current (Ic): 9A
  • Collector-Emitter Breakdown Voltage (Vces): 650V
  • Type: FS(Field Stop)
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 1.9V@15V,3A
  • Total Gate Charge (Qg@Ic,Vge): 13.7nC
  • Diode Reverse Recovery Time (Trr): 30ns
  • Turn?off Switching Loss (Eoff): 0.03mJ
  • Turn?on Switching Loss (Eon): 0.06mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IKD06N65ET6ARMA1

Full Specifications of IKD06N65ET6ARMA1

Model NumberIKD06N65ET6ARMA1
Model NameInfineon Technologies IKD06N65ET6ARMA1
CategoryIGBTs
BrandInfineon Technologies
Description31W 9A 650V FS(Field Stop) TO-252-3 IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-252-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))35ns
Power Dissipation (Pd)31W
Turn?on Delay Time (Td(on))15ns
Operating Temperature-40℃~+175℃@(Tj)
Collector Current (Ic)9A
Collector-Emitter Breakdown Voltage (Vces)650V
Input Capacitance (Cies@Vce)-
TypeFS(Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)1.9V@15V,3A
Total Gate Charge (Qg@Ic,Vge)13.7nC
Diode Reverse Recovery Time (Trr)30ns
Turn?off Switching Loss (Eoff)0.03mJ
Turn?on Switching Loss (Eon)0.06mJ

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