IKD08N65ET6ARMA1 by Infineon Technologies – Specifications

Infineon Technologies IKD08N65ET6ARMA1 is a IKD08N65ET6ARMA1 from Infineon Technologies, part of the IGBTs. It is designed for 47W 15A 650V FS(Field Stop) TO-252-3 IGBTs ROHS. This product comes in a TO-252-3 package and is sold as Tape & Reel (TR). Key features include:

  • Turn?off Delay Time (Td(off)): 59ns
  • Power Dissipation (Pd): 47W
  • Turn?on Delay Time (Td(on)): 20ns
  • Operating Temperature: -40℃~+175℃@(Tj)
  • Collector Current (Ic): 15A
  • Collector-Emitter Breakdown Voltage (Vces): 650V
  • Type: FS(Field Stop)
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 1.9V@15V,5A
  • Total Gate Charge (Qg@Ic,Vge): 17nC
  • Diode Reverse Recovery Time (Trr): 43ns
  • Turn?off Switching Loss (Eoff): 0.04mJ
  • Turn?on Switching Loss (Eon): 0.11mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.37 grams.

More on IKD08N65ET6ARMA1

Full Specifications of IKD08N65ET6ARMA1

Model NumberIKD08N65ET6ARMA1
Model NameInfineon Technologies IKD08N65ET6ARMA1
CategoryIGBTs
BrandInfineon Technologies
Description47W 15A 650V FS(Field Stop) TO-252-3 IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.370 grams / 0.013051 oz
Package / CaseTO-252-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))59ns
Power Dissipation (Pd)47W
Turn?on Delay Time (Td(on))20ns
Operating Temperature-40℃~+175℃@(Tj)
Collector Current (Ic)15A
Collector-Emitter Breakdown Voltage (Vces)650V
Input Capacitance (Cies@Vce)-
TypeFS(Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)1.9V@15V,5A
Total Gate Charge (Qg@Ic,Vge)17nC
Diode Reverse Recovery Time (Trr)43ns
Turn?off Switching Loss (Eoff)0.04mJ
Turn?on Switching Loss (Eon)0.11mJ

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