IKP20N65H5 by Infineon Technologies – Specifications

Infineon Technologies IKP20N65H5 is a IKP20N65H5 from Infineon Technologies, part of the IGBTs. It is designed for 125W 42A 650V TO-220-3 IGBTs ROHS. This product comes in a TO-220-3 package and is sold as Tube-packed. Key features include:

  • Turn?off Delay Time (Td(off)): 156ns
  • Power Dissipation (Pd): 125W
  • Operating Temperature: -40℃~+175℃@(Tj)
  • Turn?on Delay Time (Td(on)): 18ns
  • Collector Current (Ic): 42A
  • Collector-Emitter Breakdown Voltage (Vces): 650V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 4V@200uA
  • Total Gate Charge (Qg@Ic,Vge): 48nC@20A,15V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge): 1.65V@20A,15V
  • Diode Reverse Recovery Time (Trr): 52ns
  • Turn?off Switching Loss (Eoff): 0.06mJ
  • Turn?on Switching Loss (Eon): 0.17mJ
  • Input Capacitance (Cies@Vce): 1.42nF@25V
  • Diode Forward Voltage (Vf@If): 1.45V@10A

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.8 grams.

More on IKP20N65H5

Full Specifications of IKP20N65H5

Model NumberIKP20N65H5
Model NameInfineon Technologies IKP20N65H5
CategoryIGBTs
BrandInfineon Technologies
Description125W 42A 650V TO-220-3 IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.800 grams / 0.098767 oz
Package / CaseTO-220-3
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))156ns
Power Dissipation (Pd)125W
Operating Temperature-40℃~+175℃@(Tj)
Turn?on Delay Time (Td(on))18ns
Collector Current (Ic)42A
Collector-Emitter Breakdown Voltage (Vces)650V
Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4V@200uA
Total Gate Charge (Qg@Ic,Vge)48nC@20A,15V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge)1.65V@20A,15V
Diode Reverse Recovery Time (Trr)52ns
Turn?off Switching Loss (Eoff)0.06mJ
Turn?on Switching Loss (Eon)0.17mJ
Input Capacitance (Cies@Vce)1.42nF@25V
Diode Forward Voltage (Vf@If)1.45V@10A

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