IKW03N120H by Infineon Technologies – Specifications

Infineon Technologies IKW03N120H is a IKW03N120H from Infineon Technologies, part of the IGBTs. It is designed for 62.5W 9.6A 1.2kV TO-247-3 IGBTs ROHS. This product comes in a TO-247-3 package and is sold as Bag-packed. Key features include:

  • Turn?off Delay Time (Td(off)): 281ns
  • Power Dissipation (Pd): 62.5W
  • Turn?on Delay Time (Td(on)): 9.2ns
  • Operating Temperature: -40℃~+150℃@(Tj)
  • Collector Current (Ic): 9.6A
  • Collector-Emitter Breakdown Voltage (Vces): 1.2kV
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.8V@15V,3A
  • Total Gate Charge (Qg@Ic,Vge): 22nC
  • Diode Reverse Recovery Time (Trr): 42ns
  • Turn?off Switching Loss (Eoff): 0.15mJ
  • Turn?on Switching Loss (Eon): 0.14mJ

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 8.55 grams.

More on IKW03N120H

Full Specifications of IKW03N120H

Model NumberIKW03N120H
Model NameInfineon Technologies IKW03N120H
CategoryIGBTs
BrandInfineon Technologies
Description62.5W 9.6A 1.2kV TO-247-3 IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:8.550 grams / 0.301593 oz
Package / CaseTO-247-3
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))281ns
Power Dissipation (Pd)62.5W
Turn?on Delay Time (Td(on))9.2ns
Operating Temperature-40℃~+150℃@(Tj)
Collector Current (Ic)9.6A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Input Capacitance (Cies@Vce)-
Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.8V@15V,3A
Total Gate Charge (Qg@Ic,Vge)22nC
Diode Reverse Recovery Time (Trr)42ns
Turn?off Switching Loss (Eoff)0.15mJ
Turn?on Switching Loss (Eon)0.14mJ

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