IKW40N65H5 by Infineon Technologies – Specifications

Infineon Technologies IKW40N65H5 is a IKW40N65H5 from Infineon Technologies, part of the IGBTs. It is designed for 250W 74A 650V TO-247-3 IGBTs ROHS. This product comes in a TO-247-3 package and is sold as Tube-packed. Key features include:

  • Turn?off Delay Time (Td(off)): 165ns
  • Power Dissipation (Pd): 250W
  • Operating Temperature: -40℃~+175℃@(Tj)
  • Turn?on Delay Time (Td(on)): 22ns
  • Collector Current (Ic): 74A
  • Collector-Emitter Breakdown Voltage (Vces): 650V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 4V@400uA
  • Total Gate Charge (Qg@Ic,Vge): 95nC@40A,15V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge): 1.65V@40A,15V
  • Diode Reverse Recovery Time (Trr): 62ns
  • Turn?off Switching Loss (Eoff): 0.12mJ
  • Turn?on Switching Loss (Eon): 0.39mJ
  • Input Capacitance (Cies@Vce): 2.5nF@25V
  • Diode Forward Voltage (Vf@If): 1.45V@20A

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 7.792 grams.

More on IKW40N65H5

Full Specifications of IKW40N65H5

Model NumberIKW40N65H5
Model NameInfineon Technologies IKW40N65H5
CategoryIGBTs
BrandInfineon Technologies
Description250W 74A 650V TO-247-3 IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:7.792 grams / 0.274855 oz
Package / CaseTO-247-3
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Turn?off Delay Time (Td(off))165ns
Power Dissipation (Pd)250W
Operating Temperature-40℃~+175℃@(Tj)
Turn?on Delay Time (Td(on))22ns
Collector Current (Ic)74A
Collector-Emitter Breakdown Voltage (Vces)650V
Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4V@400uA
Total Gate Charge (Qg@Ic,Vge)95nC@40A,15V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge)1.65V@40A,15V
Diode Reverse Recovery Time (Trr)62ns
Turn?off Switching Loss (Eoff)0.12mJ
Turn?on Switching Loss (Eon)0.39mJ
Input Capacitance (Cies@Vce)2.5nF@25V
Diode Forward Voltage (Vf@If)1.45V@20A

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