IKZ50N65ES5 by Infineon Technologies – Specifications

Infineon Technologies IKZ50N65ES5 is a IKZ50N65ES5 from Infineon Technologies, part of the IGBTs. It is designed for 274W 80A 650V TO-247-4 IGBTs ROHS. This product comes in a TO-247-4 package and is sold as Tube-packed. Key features include:

  • Power Dissipation (Pd): 274W
  • Turn?off Delay Time (Td(off)): 294ns
  • Operating Temperature: -40℃~+175℃@(Tj)
  • Turn?on Delay Time (Td(on)): 36ns
  • Collector Current (Ic): 80A
  • Collector-Emitter Breakdown Voltage (Vces): 650V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 4V@500uA
  • Total Gate Charge (Qg@Ic,Vge): 120nC@50A,15V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge): 1.35V@50A,15V
  • Diode Reverse Recovery Time (Trr): 62ns
  • Turn?off Switching Loss (Eoff): 0.88mJ
  • Turn?on Switching Loss (Eon): 0.77mJ
  • Input Capacitance (Cies@Vce): 3.1nF@25V
  • Diode Forward Voltage (Vf@If): 1.45V@50A

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IKZ50N65ES5

Full Specifications of IKZ50N65ES5

Model NumberIKZ50N65ES5
Model NameInfineon Technologies IKZ50N65ES5
CategoryIGBTs
BrandInfineon Technologies
Description274W 80A 650V TO-247-4 IGBTs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-247-4
Package / ArrangeTube-packed
BatteryNo
ECCN-
Power Dissipation (Pd)274W
Turn?off Delay Time (Td(off))294ns
Operating Temperature-40℃~+175℃@(Tj)
Turn?on Delay Time (Td(on))36ns
Collector Current (Ic)80A
Collector-Emitter Breakdown Voltage (Vces)650V
Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)4V@500uA
Total Gate Charge (Qg@Ic,Vge)120nC@50A,15V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge)1.35V@50A,15V
Diode Reverse Recovery Time (Trr)62ns
Turn?off Switching Loss (Eoff)0.88mJ
Turn?on Switching Loss (Eon)0.77mJ
Input Capacitance (Cies@Vce)3.1nF@25V
Diode Forward Voltage (Vf@If)1.45V@50A

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