IMZA120R007M1HXKSA1 by Infineon Technologies – Specifications

Infineon Technologies IMZA120R007M1HXKSA1 is a IMZA120R007M1HXKSA1 from Infineon Technologies, part of the MOSFETs. It is designed for 1.2kV 225A 9.9mΩ@108A,18V 750W 5.2V@47mA 1PCSNChannel TO-247-4 MOSFETs ROHS. This product comes in a TO-247-4 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 1.2kV
  • Continuous Drain Current (Id): 225A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 9.9mΩ@108A,18V
  • Power Dissipation (Pd): 750W
  • Gate Threshold Voltage (Vgs(th)@Id): 5.2V@47mA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 9.17uF@25V
  • Total Gate Charge (Qg@Vgs): 220nC@18V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IMZA120R007M1HXKSA1

Full Specifications of IMZA120R007M1HXKSA1

Model NumberIMZA120R007M1HXKSA1
Model NameInfineon Technologies IMZA120R007M1HXKSA1
CategoryMOSFETs
BrandInfineon Technologies
Description1.2kV 225A 9.9mΩ@108A,18V 750W 5.2V@47mA 1PCSNChannel TO-247-4 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-247-4
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)1.2kV
Continuous Drain Current (Id)225A
Drain Source On Resistance (RDS(on)@Vgs,Id)9.9mΩ@108A,18V
Power Dissipation (Pd)750W
Gate Threshold Voltage (Vgs(th)@Id)5.2V@47mA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)9.17uF@25V
Total Gate Charge (Qg@Vgs)220nC@18V
Operating Temperature-55℃~+175℃@(Tj)

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