IPA041N04NGXKSA1 by Infineon Technologies – Specifications

Infineon Technologies IPA041N04NGXKSA1 is a IPA041N04NGXKSA1 from Infineon Technologies, part of the MOSFETs. It is designed for 40V 70A 35W 4.1mΩ@70A,10V 4V@45uA 1PCSNChannel TO-220-FP MOSFETs ROHS. This product comes in a TO-220-FP package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 70A
  • Power Dissipation (Pd): 35W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 4.1mΩ@70A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@45uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 4.5nF@20V
  • Total Gate Charge (Qg@Vgs): 56nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IPA041N04NGXKSA1

Model NumberIPA041N04NGXKSA1
Model NameInfineon Technologies IPA041N04NGXKSA1
CategoryMOSFETs
BrandInfineon Technologies
Description40V 70A 35W 4.1mΩ@70A,10V 4V@45uA 1PCSNChannel TO-220-FP MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-220-FP
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)40V
Continuous Drain Current (Id)70A
Power Dissipation (Pd)35W
Drain Source On Resistance (RDS(on)@Vgs,Id)4.1mΩ@70A,10V
Gate Threshold Voltage (Vgs(th)@Id)4V@45uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)4.5nF@20V
Total Gate Charge (Qg@Vgs)56nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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