Infineon Technologies IPA50R299CP is a IPA50R299CP from Infineon Technologies, part of the MOSFETs. It is designed for 500V 12A 104W 299mΩ@6.6A,10V 3.5V@440uA 1PCSNChannel TO-220-3-31 MOSFETs ROHS. This product comes in a TO-220-3-31 package and is sold as Bag-packed. Key features include:
- Drain Source Voltage (Vdss): 500V
- Continuous Drain Current (Id): 12A
- Power Dissipation (Pd): 104W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 299mΩ@6.6A,10V
- Gate Threshold Voltage (Vgs(th)@Id): 3.5V@440uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 1.19nF@100V
- Total Gate Charge (Qg@Vgs): 31nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on IPA50R299CP
Full Specifications of IPA50R299CP
Model Number | IPA50R299CP |
Model Name | Infineon Technologies IPA50R299CP |
Category | MOSFETs |
Brand | Infineon Technologies |
Description | 500V 12A 104W 299mΩ@6.6A,10V 3.5V@440uA 1PCSNChannel TO-220-3-31 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | TO-220-3-31 |
Package / Arrange | Bag-packed |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 500V |
Continuous Drain Current (Id) | 12A |
Power Dissipation (Pd) | 104W |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 299mΩ@6.6A,10V |
Gate Threshold Voltage (Vgs(th)@Id) | 3.5V@440uA |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 1.19nF@100V |
Total Gate Charge (Qg@Vgs) | 31nC@10V |
Operating Temperature | -55℃~+150℃@(Tj) |
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