IPA60R1K5CEXKSA1 by Infineon Technologies – Specifications

Infineon Technologies IPA60R1K5CEXKSA1 is a IPA60R1K5CEXKSA1 from Infineon Technologies, part of the MOSFETs. It is designed for 600V 5A 1.5Ω@1.1A,10V 20W 3.5V@90uA 1PCSNChannel TO-220-FP MOSFETs ROHS. This product comes in a TO-220-FP package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 600V
  • Continuous Drain Current (Id): 5A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.5Ω@1.1A,10V
  • Power Dissipation (Pd): 20W
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V@90uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 200pF@100V
  • Total Gate Charge (Qg@Vgs): 9.4nC@10V
  • Operating Temperature: -40℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IPA60R1K5CEXKSA1

Full Specifications of IPA60R1K5CEXKSA1

Model NumberIPA60R1K5CEXKSA1
Model NameInfineon Technologies IPA60R1K5CEXKSA1
CategoryMOSFETs
BrandInfineon Technologies
Description600V 5A 1.5Ω@1.1A,10V 20W 3.5V@90uA 1PCSNChannel TO-220-FP MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-220-FP
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)600V
Continuous Drain Current (Id)5A
Drain Source On Resistance (RDS(on)@Vgs,Id)1.5Ω@1.1A,10V
Power Dissipation (Pd)20W
Gate Threshold Voltage (Vgs(th)@Id)3.5V@90uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)200pF@100V
Total Gate Charge (Qg@Vgs)9.4nC@10V
Operating Temperature-40℃~+150℃@(Tj)

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