IPA60R600P7SXKSA1 by Infineon Technologies – Specifications

Infineon Technologies IPA60R600P7SXKSA1 is a IPA60R600P7SXKSA1 from Infineon Technologies, part of the MOSFETs. It is designed for 600V 6A 21W 600mΩ@1.7A,10V 4V@80uA 1PCSNChannel TO-220-FP MOSFETs ROHS. This product comes in a TO-220-FP package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 600V
  • Continuous Drain Current (Id): 6A
  • Power Dissipation (Pd): 21W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 600mΩ@1.7A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@80uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 363pF@400V
  • Total Gate Charge (Qg@Vgs): 9nC@10V
  • Operating Temperature: -40℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IPA60R600P7SXKSA1

Full Specifications of IPA60R600P7SXKSA1

Model NumberIPA60R600P7SXKSA1
Model NameInfineon Technologies IPA60R600P7SXKSA1
CategoryMOSFETs
BrandInfineon Technologies
Description600V 6A 21W 600mΩ@1.7A,10V 4V@80uA 1PCSNChannel TO-220-FP MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-220-FP
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)600V
Continuous Drain Current (Id)6A
Power Dissipation (Pd)21W
Drain Source On Resistance (RDS(on)@Vgs,Id)600mΩ@1.7A,10V
Gate Threshold Voltage (Vgs(th)@Id)4V@80uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)363pF@400V
Total Gate Charge (Qg@Vgs)9nC@10V
Operating Temperature-40℃~+150℃@(Tj)

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