IPA65R125C7XKSA1 by Infineon Technologies – Specifications

Infineon Technologies IPA65R125C7XKSA1 is a IPA65R125C7XKSA1 from Infineon Technologies, part of the MOSFETs. It is designed for 650V 10A 32W 125mΩ@8.9A,10V 4V@440uA 1PCSNChannel TO-220-FP MOSFETs ROHS. This product comes in a TO-220-FP package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id): 10A
  • Power Dissipation (Pd): 32W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 125mΩ@8.9A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@440uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.67nF@400V
  • Total Gate Charge (Qg@Vgs): 35nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IPA65R125C7XKSA1

Full Specifications of IPA65R125C7XKSA1

Model NumberIPA65R125C7XKSA1
Model NameInfineon Technologies IPA65R125C7XKSA1
CategoryMOSFETs
BrandInfineon Technologies
Description650V 10A 32W 125mΩ@8.9A,10V 4V@440uA 1PCSNChannel TO-220-FP MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-220-FP
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)650V
Continuous Drain Current (Id)10A
Power Dissipation (Pd)32W
Drain Source On Resistance (RDS(on)@Vgs,Id)125mΩ@8.9A,10V
Gate Threshold Voltage (Vgs(th)@Id)4V@440uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.67nF@400V
Total Gate Charge (Qg@Vgs)35nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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