IPA65R1K5CEXKSA1 by Infineon Technologies – Specifications

Infineon Technologies IPA65R1K5CEXKSA1 is a IPA65R1K5CEXKSA1 from Infineon Technologies, part of the MOSFETs. It is designed for 650V 5.2A 30W 1.5Ω@1A,10V 3.5V@130uA 1PCSNChannel TO-220-FP MOSFETs ROHS. This product comes in a TO-220-FP package and is sold as Tube-packed. Key features include:

• Drain Source Voltage (Vdss): 650V
• Continuous Drain Current (Id): 5.2A
• Power Dissipation (Pd): 30W
• Drain Source On Resistance (RDS(on)@Vgs,Id): 1.5Ω@1A,10V
• Gate Threshold Voltage (Vgs(th)@Id): 3.5V@130uA
• Type: 1PCSNChannel
• Input Capacitance (Ciss@Vds): 225pF@100V
• Total Gate Charge (Qg@Vgs): 10.5nC@10V
• Operating Temperature: -40℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.