IPA80R1K2P7XKSA1 by Infineon Technologies – Specifications

Infineon Technologies IPA80R1K2P7XKSA1 is a IPA80R1K2P7XKSA1 from Infineon Technologies, part of the MOSFETs. It is designed for 800V 4.5A 25W 1.2Ω@1.7A,10V 3.5V@80uA 1PCSNChannel TO-220-3-FP MOSFETs ROHS. This product comes in a TO-220-3-FP package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 800V
  • Continuous Drain Current (Id): 4.5A
  • Power Dissipation (Pd): 25W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.2Ω@1.7A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V@80uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 300pF@500V
  • Total Gate Charge (Qg@Vgs): 11nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of IPA80R1K2P7XKSA1

Model NumberIPA80R1K2P7XKSA1
Model NameInfineon Technologies IPA80R1K2P7XKSA1
CategoryMOSFETs
BrandInfineon Technologies
Description800V 4.5A 25W 1.2Ω@1.7A,10V 3.5V@80uA 1PCSNChannel TO-220-3-FP MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-220-3-FP
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)800V
Continuous Drain Current (Id)4.5A
Power Dissipation (Pd)25W
Drain Source On Resistance (RDS(on)@Vgs,Id)1.2Ω@1.7A,10V
Gate Threshold Voltage (Vgs(th)@Id)3.5V@80uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)300pF@500V
Total Gate Charge (Qg@Vgs)11nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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