IPA80R460CE by Infineon Technologies – Specifications

Infineon Technologies IPA80R460CE is a IPA80R460CE from Infineon Technologies, part of the MOSFETs. It is designed for 800V 10.8A 390mΩ@10V,7.1A 34W 3V@680uA 1PCSNChannel TO-220 MOSFETs ROHS. This product comes in a TO-220 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 800V
  • Continuous Drain Current (Id): 10.8A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 390mΩ@10V,7.1A
  • Power Dissipation (Pd): 34W
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@680uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.6nF@100V
  • Total Gate Charge (Qg@Vgs): 64nC@10V
  • Operating Temperature: -40℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 3.18 grams.

Full Specifications of IPA80R460CE

Model NumberIPA80R460CE
Model NameInfineon Technologies IPA80R460CE
CategoryMOSFETs
BrandInfineon Technologies
Description800V 10.8A 390mΩ@10V,7.1A 34W 3V@680uA 1PCSNChannel TO-220 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:3.180 grams / 0.112171 oz
Package / CaseTO-220
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)800V
Continuous Drain Current (Id)10.8A
Drain Source On Resistance (RDS(on)@Vgs,Id)390mΩ@10V,7.1A
Power Dissipation (Pd)34W
Gate Threshold Voltage (Vgs(th)@Id)3V@680uA
Reverse Transfer Capacitance (Crss@Vds)-
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.6nF@100V
Total Gate Charge (Qg@Vgs)64nC@10V
Operating Temperature-40℃~+150℃@(Tj)

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