IPAW60R360P7SXKSA1 by Infineon Technologies – Specifications

Infineon Technologies IPAW60R360P7SXKSA1 is a IPAW60R360P7SXKSA1 from Infineon Technologies, part of the MOSFETs. It is designed for 650V 9A 22W 360mΩ@2.7A,10V 4V@140uA 1PCSNChannel TO-220 MOSFETs ROHS. This product comes in a TO-220 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id): 9A
  • Power Dissipation (Pd): 22W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 360mΩ@2.7A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@140uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 555pF@400V
  • Total Gate Charge (Qg@Vgs): 13nC@10V
  • Operating Temperature: -40℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.77 grams.

More on IPAW60R360P7SXKSA1

Full Specifications of IPAW60R360P7SXKSA1

Model NumberIPAW60R360P7SXKSA1
Model NameInfineon Technologies IPAW60R360P7SXKSA1
CategoryMOSFETs
BrandInfineon Technologies
Description650V 9A 22W 360mΩ@2.7A,10V 4V@140uA 1PCSNChannel TO-220 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.770 grams / 0.097709 oz
Package / CaseTO-220
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)650V
Continuous Drain Current (Id)9A
Power Dissipation (Pd)22W
Drain Source On Resistance (RDS(on)@Vgs,Id)360mΩ@2.7A,10V
Gate Threshold Voltage (Vgs(th)@Id)4V@140uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)555pF@400V
Total Gate Charge (Qg@Vgs)13nC@10V
Operating Temperature-40℃~+150℃@(Tj)

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