IPB016N08NF2SATMA1 by Infineon Technologies – Specifications

Infineon Technologies IPB016N08NF2SATMA1 is a IPB016N08NF2SATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 80V 170A 300W 1.65mΩ@100A,10V 3.8V@267uA 1PCSNChannel - MOSFETs ROHS. This product comes in a - package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 80V
  • Continuous Drain Current (Id): 170A
  • Power Dissipation (Pd): 300W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.65mΩ@100A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 3.8V@267uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 12nF@40V
  • Total Gate Charge (Qg@Vgs): 255nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IPB016N08NF2SATMA1

Model NumberIPB016N08NF2SATMA1
Model NameInfineon Technologies IPB016N08NF2SATMA1
CategoryMOSFETs
BrandInfineon Technologies
Description80V 170A 300W 1.65mΩ@100A,10V 3.8V@267uA 1PCSNChannel - MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / Case-
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)80V
Continuous Drain Current (Id)170A
Power Dissipation (Pd)300W
Drain Source On Resistance (RDS(on)@Vgs,Id)1.65mΩ@100A,10V
Gate Threshold Voltage (Vgs(th)@Id)3.8V@267uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)12nF@40V
Total Gate Charge (Qg@Vgs)255nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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