IPB019N06L3GATMA1 by Infineon Technologies – Specifications

Infineon Technologies IPB019N06L3GATMA1 is a IPB019N06L3GATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 60V 120A 1.9mΩ@100A,10V 250W 2.2V@196uA 1PCSNChannel TO-263-3 MOSFETs ROHS. This product comes in a TO-263-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 120A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.9mΩ@100A,10V
  • Power Dissipation (Pd): 250W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.2V@196uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 28nF@30V
  • Total Gate Charge (Qg@Vgs): [email protected]
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IPB019N06L3GATMA1

Model NumberIPB019N06L3GATMA1
Model NameInfineon Technologies IPB019N06L3GATMA1
CategoryMOSFETs
BrandInfineon Technologies
Description60V 120A 1.9mΩ@100A,10V 250W 2.2V@196uA 1PCSNChannel TO-263-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-263-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)120A
Drain Source On Resistance (RDS(on)@Vgs,Id)1.9mΩ@100A,10V
Power Dissipation (Pd)250W
Gate Threshold Voltage (Vgs(th)@Id)2.2V@196uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)28nF@30V
Total Gate Charge (Qg@Vgs)[email protected]
Operating Temperature-55℃~+175℃@(Tj)

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