IPB020NE7N3 G by Infineon Technologies – Specifications

Infineon Technologies IPB020NE7N3 G is a IPB020NE7N3 G from Infineon Technologies, part of the MOSFETs. It is designed for 75V 120A 300W 2mΩ@10V,100A 3.8V@273uA 1PCSNChannel TO-263-3 MOSFETs ROHS. This product comes in a TO-263-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 75V
  • Continuous Drain Current (Id): 120A
  • Power Dissipation (Pd): 300W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 2mΩ@10V,100A
  • Gate Threshold Voltage (Vgs(th)@Id): 3.8V@273uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IPB020NE7N3 G

Model NumberIPB020NE7N3 G
Model NameInfineon Technologies IPB020NE7N3 G
CategoryMOSFETs
BrandInfineon Technologies
Description75V 120A 300W 2mΩ@10V,100A 3.8V@273uA 1PCSNChannel TO-263-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-263-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)75V
Continuous Drain Current (Id)120A
Power Dissipation (Pd)300W
Drain Source On Resistance (RDS(on)@Vgs,Id)2mΩ@10V,100A
Gate Threshold Voltage (Vgs(th)@Id)3.8V@273uA
Type1PCSNChannel

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