IPB030N08N3 G by Infineon Technologies – Specifications

Infineon Technologies IPB030N08N3 G is a IPB030N08N3 G from Infineon Technologies, part of the MOSFETs. It is designed for 80V 160A 2.5mΩ@10V,100mA 214W 2.8V@155uA 1PCSNChannel TO-263-7 MOSFETs ROHS. This product comes in a TO-263-7 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 80V
  • Continuous Drain Current (Id): 160A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 2.5mΩ@10V,100mA
  • Power Dissipation (Pd): 214W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.8V@155uA
  • Reverse Transfer Capacitance (Crss@Vds): 59pF@40V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 6.1nF@40V
  • Total Gate Charge (Qg@Vgs): 88nC@0~10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IPB030N08N3 G

Model NumberIPB030N08N3 G
Model NameInfineon Technologies IPB030N08N3 G
CategoryMOSFETs
BrandInfineon Technologies
Description80V 160A 2.5mΩ@10V,100mA 214W 2.8V@155uA 1PCSNChannel TO-263-7 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-263-7
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)80V
Continuous Drain Current (Id)160A
Drain Source On Resistance (RDS(on)@Vgs,Id)2.5mΩ@10V,100mA
Power Dissipation (Pd)214W
Gate Threshold Voltage (Vgs(th)@Id)2.8V@155uA
Reverse Transfer Capacitance (Crss@Vds)59pF@40V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)6.1nF@40V
Total Gate Charge (Qg@Vgs)88nC@0~10V
Operating Temperature-55℃~+175℃@(Tj)

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