IPB037N06N3GATMA1 by Infineon Technologies – Specifications

Infineon Technologies IPB037N06N3GATMA1 is a IPB037N06N3GATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 60V 90A 188W 3.7mΩ@90A,10V 4V@90uA 1PCSNChannel TO-263-3 MOSFETs ROHS. This product comes in a TO-263-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 90A
  • Power Dissipation (Pd): 188W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 3.7mΩ@90A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@90uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 11nF@30V
  • Total Gate Charge (Qg@Vgs): 98nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IPB037N06N3GATMA1

Model NumberIPB037N06N3GATMA1
Model NameInfineon Technologies IPB037N06N3GATMA1
CategoryMOSFETs
BrandInfineon Technologies
Description60V 90A 188W 3.7mΩ@90A,10V 4V@90uA 1PCSNChannel TO-263-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-263-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)90A
Power Dissipation (Pd)188W
Drain Source On Resistance (RDS(on)@Vgs,Id)3.7mΩ@90A,10V
Gate Threshold Voltage (Vgs(th)@Id)4V@90uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)11nF@30V
Total Gate Charge (Qg@Vgs)98nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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