IPB038N12N3GATMA1 by Infineon Technologies – Specifications

Infineon Technologies IPB038N12N3GATMA1 is a IPB038N12N3GATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 120V 120A 300W 3.8mΩ@100A,10V 4V@270uA 1PCSNChannel TO-263-3 MOSFETs ROHS. This product comes in a TO-263-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 120V
  • Continuous Drain Current (Id): 120A
  • Power Dissipation (Pd): 300W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 3.8mΩ@100A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@270uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 13.8nF@60V
  • Total Gate Charge (Qg@Vgs): 211nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.5 grams.

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Full Specifications of IPB038N12N3GATMA1

Model NumberIPB038N12N3GATMA1
Model NameInfineon Technologies IPB038N12N3GATMA1
CategoryMOSFETs
BrandInfineon Technologies
Description120V 120A 300W 3.8mΩ@100A,10V 4V@270uA 1PCSNChannel TO-263-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.500 grams / 0.088185 oz
Package / CaseTO-263-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)120V
Continuous Drain Current (Id)120A
Power Dissipation (Pd)300W
Drain Source On Resistance (RDS(on)@Vgs,Id)3.8mΩ@100A,10V
Gate Threshold Voltage (Vgs(th)@Id)4V@270uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)13.8nF@60V
Total Gate Charge (Qg@Vgs)211nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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