IPB050N10NF2SATMA1 by Infineon Technologies – Specifications

Infineon Technologies IPB050N10NF2SATMA1 is a IPB050N10NF2SATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 100V 103A 5.05mΩ@60A,10V 150W 3.8V@85uA 1PCSNChannel TO-263-3 MOSFETs ROHS. This product comes in a TO-263-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 103A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 5.05mΩ@60A,10V
  • Power Dissipation (Pd): 150W
  • Gate Threshold Voltage (Vgs(th)@Id): 3.8V@85uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 3.6nF@50V
  • Total Gate Charge (Qg@Vgs): 76nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IPB050N10NF2SATMA1

Full Specifications of IPB050N10NF2SATMA1

Model NumberIPB050N10NF2SATMA1
Model NameInfineon Technologies IPB050N10NF2SATMA1
CategoryMOSFETs
BrandInfineon Technologies
Description100V 103A 5.05mΩ@60A,10V 150W 3.8V@85uA 1PCSNChannel TO-263-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-263-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)103A
Drain Source On Resistance (RDS(on)@Vgs,Id)5.05mΩ@60A,10V
Power Dissipation (Pd)150W
Gate Threshold Voltage (Vgs(th)@Id)3.8V@85uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)3.6nF@50V
Total Gate Charge (Qg@Vgs)76nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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