IPB052N04NG by Infineon Technologies – Specifications

Infineon Technologies IPB052N04NG is a IPB052N04NG from Infineon Technologies, part of the MOSFETs. It is designed for 40V 70A 79W 5.2mΩ@70A,10V 4V@33uA 1PCSNChannel TO-263 MOSFETs ROHS. This product comes in a TO-263 package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 70A
  • Power Dissipation (Pd): 79W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 5.2mΩ@70A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@33uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 3.3nF@20V
  • Total Gate Charge (Qg@Vgs): 42nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IPB052N04NG

Full Specifications of IPB052N04NG

Model NumberIPB052N04NG
Model NameInfineon Technologies IPB052N04NG
CategoryMOSFETs
BrandInfineon Technologies
Description40V 70A 79W 5.2mΩ@70A,10V 4V@33uA 1PCSNChannel TO-263 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-263
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)40V
Continuous Drain Current (Id)70A
Power Dissipation (Pd)79W
Drain Source On Resistance (RDS(on)@Vgs,Id)5.2mΩ@70A,10V
Gate Threshold Voltage (Vgs(th)@Id)4V@33uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)3.3nF@20V
Total Gate Charge (Qg@Vgs)42nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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