IPB072N15N3GATMA1 by Infineon Technologies – Specifications

Infineon Technologies IPB072N15N3GATMA1 is a IPB072N15N3GATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 150V 100A 7.2mΩ@100A,10V 300W 4V@270uA 1PCSNChannel TO-263 MOSFETs ROHS. This product comes in a TO-263 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 150V
  • Continuous Drain Current (Id): 100A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 7.2mΩ@100A,10V
  • Power Dissipation (Pd): 300W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@270uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 5.47nF@75V
  • Total Gate Charge (Qg@Vgs): 93nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.53 grams.

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Full Specifications of IPB072N15N3GATMA1

Model NumberIPB072N15N3GATMA1
Model NameInfineon Technologies IPB072N15N3GATMA1
CategoryMOSFETs
BrandInfineon Technologies
Description150V 100A 7.2mΩ@100A,10V 300W 4V@270uA 1PCSNChannel TO-263 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.530 grams / 0.018695 oz
Package / CaseTO-263
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)150V
Continuous Drain Current (Id)100A
Drain Source On Resistance (RDS(on)@Vgs,Id)7.2mΩ@100A,10V
Power Dissipation (Pd)300W
Gate Threshold Voltage (Vgs(th)@Id)4V@270uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)5.47nF@75V
Total Gate Charge (Qg@Vgs)93nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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