IPB080N03L G by Infineon Technologies – Specifications

Infineon Technologies IPB080N03L G is a IPB080N03L G from Infineon Technologies, part of the MOSFETs. It is designed for 30V 50A 47W 8mΩ@30A,10V 2.2V@250uA 1PCSNChannel TO-263-3 MOSFETs ROHS. This product comes in a TO-263-3 package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 50A
  • Power Dissipation (Pd): 47W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 8mΩ@30A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 2.2V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.9nF@15V
  • Total Gate Charge (Qg@Vgs): 18nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IPB080N03L G

Model NumberIPB080N03L G
Model NameInfineon Technologies IPB080N03L G
CategoryMOSFETs
BrandInfineon Technologies
Description30V 50A 47W 8mΩ@30A,10V 2.2V@250uA 1PCSNChannel TO-263-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-263-3
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)50A
Power Dissipation (Pd)47W
Drain Source On Resistance (RDS(on)@Vgs,Id)8mΩ@30A,10V
Gate Threshold Voltage (Vgs(th)@Id)2.2V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.9nF@15V
Total Gate Charge (Qg@Vgs)18nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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