IPB100P03P3L-04 by Infineon Technologies – Specifications

Infineon Technologies IPB100P03P3L-04 is a IPB100P03P3L-04 from Infineon Technologies, part of the MOSFETs. It is designed for 30V 100A 200W 4.3mΩ@80A,10V 2.1V@475uA 1PCSPChannel TO-263-3 MOSFETs ROHS. This product comes in a TO-263-3 package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 100A
  • Power Dissipation (Pd): 200W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 4.3mΩ@80A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 2.1V@475uA
  • Type: 1PCSPChannel
  • Input Capacitance (Ciss@Vds): 9.3nF@25V
  • Total Gate Charge (Qg@Vgs): 200nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IPB100P03P3L-04

Model NumberIPB100P03P3L-04
Model NameInfineon Technologies IPB100P03P3L-04
CategoryMOSFETs
BrandInfineon Technologies
Description30V 100A 200W 4.3mΩ@80A,10V 2.1V@475uA 1PCSPChannel TO-263-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-263-3
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)100A
Power Dissipation (Pd)200W
Drain Source On Resistance (RDS(on)@Vgs,Id)4.3mΩ@80A,10V
Gate Threshold Voltage (Vgs(th)@Id)2.1V@475uA
Type1PCSPChannel
Input Capacitance (Ciss@Vds)9.3nF@25V
Total Gate Charge (Qg@Vgs)200nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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