IPB160N04S2-03 by Infineon Technologies – Specifications

Infineon Technologies IPB160N04S2-03 is a IPB160N04S2-03 from Infineon Technologies, part of the MOSFETs. It is designed for 40V 160A 300W 2.9mΩ@10V,60A 4V@250uA 1PCSNChannel TO-263-7 MOSFETs ROHS. This product comes in a TO-263-7 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 160A
  • Power Dissipation (Pd): 300W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 2.9mΩ@10V,60A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of IPB160N04S2-03

Model NumberIPB160N04S2-03
Model NameInfineon Technologies IPB160N04S2-03
CategoryMOSFETs
BrandInfineon Technologies
Description40V 160A 300W 2.9mΩ@10V,60A 4V@250uA 1PCSNChannel TO-263-7 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-263-7
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)40V
Continuous Drain Current (Id)160A
Power Dissipation (Pd)300W
Drain Source On Resistance (RDS(on)@Vgs,Id)2.9mΩ@10V,60A
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel

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