IPB17N25S3100ATMA1 by Infineon Technologies – Specifications

Infineon Technologies IPB17N25S3100ATMA1 is a IPB17N25S3100ATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 250V 17A 100mΩ@17A,10V 107W 4V@54uA 1PCSNChannel TO-263 MOSFETs ROHS. This product comes in a TO-263 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 250V
  • Continuous Drain Current (Id): 17A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 100mΩ@17A,10V
  • Power Dissipation (Pd): 107W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@54uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.5nF@25V
  • Total Gate Charge (Qg@Vgs): 19nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1.9 grams.

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Full Specifications of IPB17N25S3100ATMA1

Model NumberIPB17N25S3100ATMA1
Model NameInfineon Technologies IPB17N25S3100ATMA1
CategoryMOSFETs
BrandInfineon Technologies
Description250V 17A 100mΩ@17A,10V 107W 4V@54uA 1PCSNChannel TO-263 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.900 grams / 0.067021 oz
Package / CaseTO-263
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)250V
Continuous Drain Current (Id)17A
Drain Source On Resistance (RDS(on)@Vgs,Id)100mΩ@17A,10V
Power Dissipation (Pd)107W
Gate Threshold Voltage (Vgs(th)@Id)4V@54uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.5nF@25V
Total Gate Charge (Qg@Vgs)19nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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