IPB180N03S4L-H0 by Infineon Technologies – Specifications

Infineon Technologies IPB180N03S4L-H0 is a IPB180N03S4L-H0 from Infineon Technologies, part of the MOSFETs. It is designed for 30V 180A 250W 0.95mΩ@10V,100A 2.2V@200uA 1PCSNChannel TO-263-7 MOSFETs ROHS. This product comes in a TO-263-7 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 180A
  • Power Dissipation (Pd): 250W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 0.95mΩ@10V,100A
  • Gate Threshold Voltage (Vgs(th)@Id): 2.2V@200uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IPB180N03S4L-H0

Full Specifications of IPB180N03S4L-H0

Model NumberIPB180N03S4L-H0
Model NameInfineon Technologies IPB180N03S4L-H0
CategoryMOSFETs
BrandInfineon Technologies
Description30V 180A 250W 0.95mΩ@10V,100A 2.2V@200uA 1PCSNChannel TO-263-7 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-263-7
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)180A
Power Dissipation (Pd)250W
Drain Source On Resistance (RDS(on)@Vgs,Id)0.95mΩ@10V,100A
Gate Threshold Voltage (Vgs(th)@Id)2.2V@200uA
Type1PCSNChannel

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