IPB180N03S4L01ATMA1 by Infineon Technologies – Specifications

Infineon Technologies IPB180N03S4L01ATMA1 is a IPB180N03S4L01ATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 30V 180A 188W 1.05mΩ@100A,10V 2.2V@140uA 1PCSNChannel TO-263-7-3 MOSFETs ROHS. This product comes in a TO-263-7-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 180A
  • Power Dissipation (Pd): 188W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.05mΩ@100A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 2.2V@140uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 17.6nF@25V
  • Total Gate Charge (Qg@Vgs): 239nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IPB180N03S4L01ATMA1

Full Specifications of IPB180N03S4L01ATMA1

Model NumberIPB180N03S4L01ATMA1
Model NameInfineon Technologies IPB180N03S4L01ATMA1
CategoryMOSFETs
BrandInfineon Technologies
Description30V 180A 188W 1.05mΩ@100A,10V 2.2V@140uA 1PCSNChannel TO-263-7-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-263-7-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)180A
Power Dissipation (Pd)188W
Drain Source On Resistance (RDS(on)@Vgs,Id)1.05mΩ@100A,10V
Gate Threshold Voltage (Vgs(th)@Id)2.2V@140uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)17.6nF@25V
Total Gate Charge (Qg@Vgs)239nC@10V
Operating Temperature-55℃~+175℃@(Tj)

Compare Infineon Technologies - IPB180N03S4L01ATMA1 With Other 200 Models

Related Models - IPB180N03S4L01ATMA1 Alternative

Scroll to Top