IPB180N04S4LH0ATMA1 by Infineon Technologies – Specifications

Infineon Technologies IPB180N04S4LH0ATMA1 is a IPB180N04S4LH0ATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 40V 180A 1mΩ@100A,10V 250W 2.2V@180uA 1PCSNChannel TO-263-7-3 MOSFETs ROHS. This product comes in a TO-263-7-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 180A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1mΩ@100A,10V
  • Power Dissipation (Pd): 250W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.2V@180uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 24.44nF@25V
  • Total Gate Charge (Qg@Vgs): 310nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IPB180N04S4LH0ATMA1

Full Specifications of IPB180N04S4LH0ATMA1

Model NumberIPB180N04S4LH0ATMA1
Model NameInfineon Technologies IPB180N04S4LH0ATMA1
CategoryMOSFETs
BrandInfineon Technologies
Description40V 180A 1mΩ@100A,10V 250W 2.2V@180uA 1PCSNChannel TO-263-7-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-263-7-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)40V
Continuous Drain Current (Id)180A
Drain Source On Resistance (RDS(on)@Vgs,Id)1mΩ@100A,10V
Power Dissipation (Pd)250W
Gate Threshold Voltage (Vgs(th)@Id)2.2V@180uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)24.44nF@25V
Total Gate Charge (Qg@Vgs)310nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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