IPB200N15N3GATMA1 by Infineon Technologies – Specifications

Infineon Technologies IPB200N15N3GATMA1 is a IPB200N15N3GATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 150V 50A 150W 20mΩ@50A,10V 4V@90uA 1PCSNChannel TO-263-3 MOSFETs ROHS. This product comes in a TO-263-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 150V
  • Continuous Drain Current (Id): 50A
  • Power Dissipation (Pd): 150W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 20mΩ@50A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@90uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.82nF@75V
  • Total Gate Charge (Qg@Vgs): 31nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IPB200N15N3GATMA1

Full Specifications of IPB200N15N3GATMA1

Model NumberIPB200N15N3GATMA1
Model NameInfineon Technologies IPB200N15N3GATMA1
CategoryMOSFETs
BrandInfineon Technologies
Description150V 50A 150W 20mΩ@50A,10V 4V@90uA 1PCSNChannel TO-263-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-263-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)150V
Continuous Drain Current (Id)50A
Power Dissipation (Pd)150W
Drain Source On Resistance (RDS(on)@Vgs,Id)20mΩ@50A,10V
Gate Threshold Voltage (Vgs(th)@Id)4V@90uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.82nF@75V
Total Gate Charge (Qg@Vgs)31nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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